Multi-sideband generation in a femtosecond Cr4+:YAG laser

被引:5
|
作者
Ishida, Y
Naganuma, K
Kamada, H
机构
[1] NTT, Optoelect Labs, Atsugi, Kanagawa 2430198, Japan
[2] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
multi-sideband; Raman; four-wave-mixing; femtosecond; solid-state laser;
D O I
10.1007/s10043-999-0037-0
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We describe the behavior of multi-sidebands in a self-mode-locked femtosecond Cr4+:YAG laser operating near 1.54 mu m. Stokes and anti-Stokes sideband components are extended over 20 THz around the center frequency. An interesting feature here is that when the spectral width of the mode-locked pulse is increased, the specific Stokes sideband near 1.65 mu m (a shift of 13.5 THz) is strongly enhanced due to an induced-Raman process in the laser rod. The measured frequency shifts for all sidebands are well explained by four-wave-mixing processes in the laser rod, accompanied by the resonance effect of the soliton and dispersive wave, both of which are affected mainly by cavity dispersions.
引用
收藏
页码:37 / 41
页数:5
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