Electroless Cu deposition on atomic layer deposited Ru as novel seed formation process in through-Si vias

被引：47
|
作者：
Inoue, Fumihiro [1 ,2 ]
Philipsen, Harold [1 ]
Radisic, Aleksandar [1 ]
Armini, Silvia [1 ]
Civale, Yann [1 ]
Leunissen, Peter [1 ]
Kondo, Muneharu [3 ]
Webb, Eric [3 ]
Shingubara, Shoso [2 ]
机构：
[1] IMEC, Leuven, Belgium
[2] Kansai Univ, Suita, Osaka, Japan
[3] MLI, Moses Lake, WA 98837 USA
来源：
ELECTROCHIMICA ACTA | 2013年 / 100卷
关键词：
Electroless deposition; Through-Si via; Seed layer; Ruthenium; COPPER DEPOSITION; ELECTRODEPOSITION; BARRIER; NUCLEATION; TSVS; RUTHENIUM; FILM;
D O I：
10.1016/j.electacta.2013.03.106
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
High aspect ratio through Si vias (phi 2 mu m, depth 30 mu m) have been filled completely by Cu electroplating using an electroless deposited Cu seed layer. The electroless Cu deposition was carried out on ALD-Ru; the time transient of the mixed potential on Ru showed a catalyst type of behavior. The ELD-Cu, which was deposited inside TSVs along their sidewalls, was defect free and worked as a seed layer for electrodeposition of Cu to fill the structure. With a conventional method, such as PVD-Cu, it is challenging to deposit a seed in such structures. The adhesion strength of this ELD-Cu film on ALD-Ru was measured to be >100 MPa. These coupon-scale results show the feasibility of electroless deposition in TSV processing. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：203 / 211
页数：9
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