Structural and optical properties of electrosynthesized ZnSe thin films

被引:48
|
作者
Dhanasekaran, V. [1 ]
Mahalingam, T. [1 ]
Rhee, Jin-Koo [2 ]
Chu, J. P. [3 ]
机构
[1] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
[2] Dongguk Univ, Millimeter Wave INnovat Technol Res Ctr MINT, Seoul 100715, South Korea
[3] Natl Taiwan Univ Sci & Technol, Dept Polymer Engn, Taipei 10607, Taiwan
来源
OPTIK | 2013年 / 124卷 / 03期
关键词
Thin films; Electrodeposition; Structural studies; Electrochemical reaction; Optical properties; P-TYPE; DEPOSITION; CONSTANTS; LAYERS; PHOTOLUMINESCENCE; ELECTRODEPOSITION; THICKNESS;
D O I
10.1016/j.ijleo.2011.11.063
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Structural properties of electrodeposited ZnSe thin films were studied using X-ray diffraction (XRD) and the electrodeposited films are found to be polycrystalline in nature with face centered cubic structure. Optical constants of ZnSe thin films for various deposition potentials were determined in the spectral range 400-1200 nm using the optical absorption and transmittance measurements. The Tauc's plot was drawn to determine the energy band gap values of the deposited films and is estimated to be in the range between 2.52 eV and 2.61 eV respectively. Their optical constants like refractive index (n), dielectric constants (epsilon), optical conductivity (sigma), average excitation energy (E-0), oscillator strength (E-d), effective mass (m(*)), plasma frequency (omega(p)), static dielectric constant (epsilon(infinity)) and carrier concentration (N) were estimated and reported. The room temperature photo luminescence studies were also performed. The near band edge luminescence emission has been observed and reported. (C) 2011 Elsevier GmbH. All rights reserved.
引用
收藏
页码:255 / 260
页数:6
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