Structure Design, Fabrication and Characteristics of Polysilicon nano-thin films Resistances Pressure Sensor Based on MEMS Technology

被引：0
|
作者：
Zhao, Xiao-feng [1 ]
Wen, Dian-zhong [1 ]
Li, Yang [2 ]
Hou, Yuan-xin [2 ]
Ai, Chun-peng [2 ]
Wang, Zhi-qiang [2 ]
Xiu, De-jun [2 ]
机构：
[1] Heilongjiang Univ, Coll Heilongjiang Prov, Key Lab Elect Engn, Harbin, Peoples R China
[2] Heilongjiang Univ, Major Lab integrated circuits, Harbin, Peoples R China
来源：
MEMS/NEMS NANO TECHNOLOGY | 2011年 / 483卷
基金：
中国国家自然科学基金;
关键词：
Polysilicon nano thin films; Pressure sensor; Microelectromechanical system (MEMS); Wheatstone bridge; POLYCRYSTALLINE SILICON FILMS;
D O I：
10.4028/www.scientific.net/KEM.483.200
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A polysilicon nano-thin films pressure sensor was designed and fabricated on single crystal silicon substrate by MEMS technology in this paper, and the sensor is composed by Wheatstone bridge structure with four polysilicon nano-thin films resistances fabricated on squared silicon membrane. The experiment result shows that, under constant current power supply of 0.875mA, full scale output is 24.05 mV at room temperature, sensitivity is 0.15 mV/kPa, when the temperatures are from -20 to 80 degrees C, the coefficient of zero temperature and sensitivity temperature is -960 ppm/degrees C and -820 ppm /degrees C respectively.
引用
收藏
页码：200 / +
页数：2
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