A new analytical model for determination of breakdown voltage of resurf structures

The paper presents an analytical model for determination of the basic breakdown properties of Resurf structures. The model is based on separate determination of lateral and vertical diode breakdown voltages constituting the Resurf structure, by taking into account the vertical diode modulation effect on the lateral depletion layer spreading, i.e. the two-dimensional effects of the Resurf structure. The obtained results are well in agreement with those from the literature as well as from numerical modeling with the MEDICI device simulation program. The derived analytical model enables sensitivity analysis of three basic design parameters (substrate and epitaxial layer doping concentrations and epitaxial layer thickness) and drift region length on the breakdown voltage of the Resurf structures. The derived model offers several extensions for analysis of breakdown properties of various Resurf structures. Copyright (C) 1996 Elsevier Science Ltd