Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

被引：10
|
作者：
Lime, F [1 ]
Andreu, F [1 ]
Derix, J [1 ]
Ghibaudo, G [1 ]
Boeuf, F [1 ]
Skotnicki, T [1 ]
机构：
[1] IMEP, ENSERG, F-38016 Grenoble, France
来源：
PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年
关键词：
D O I：
10.1109/ESSDER.2005.1546700
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a detailed investigation of the mobility in two different strained-Si technologies has been conducted. The mobility gain due to strain is nearly lost in short channel devices. The short channel loss observed in both cases is attributed to a bigger contribution of Coulomb scattering and to a larger subband splitting due to pocket implants. Finally, the mobility gain reduction with temperature lowering has been quantitatively interpreted by a simple analytical model accounting for the fourfold valley depopulation and considering different scattering rates for the two first subbands.
引用
收藏
页码：525 / 528
页数：4
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