Modeling and characterization of high frequency high power GaN/SiC HBT's operating at high temperature

被引：0
|
作者：
Fardi, HZ [1 ]
Pankove, JI [1 ]
机构：
[1] UNIV COLORADO,DEPT ELECT ENGN,DENVER,CO 80217
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IV | 1996年 / 2693卷
关键词：
GaN/SiC HBT's; device modeling; numerical analysis; high temperature transistors; high power transistors;
D O I：
10.1117/12.238942
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：73 / 83
页数：11
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