Reliability Performance of Advanced Metallization Options for 30nm 1/2 pitch in SiCOH Low-k Materials

被引：0
|
作者：
Croes, K. [1 ]
Demuynck, S. [1 ]
Siew, Y. K. [1 ]
Wilson, C. J. [1 ]
Heylen, N. [1 ]
Beyer, G. P. [1 ]
Tokei, Zs. [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM) | 2011年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Metallization options to fill 30nm 1/2 pitch trenches have been explored and their Time-Dependent-Dielectric-Breakdown (TDDB) and electromigration (EM) performance have been benchmarked to the conventional PVD TaNTa / PVD Cu seed based metallization. CVD Co as seed enhancement layer shows no deterioration in TDDB performance and improved EM performance, but the activation energy for EM was 0.68 +/- 0.20eV, which is at the lower end of the expected value of 0.85-0.95eV for this parameter. PVD RuTa barriers with 90%Ru and 10%Ta show degraded barrier performance and significant lowering of activation energy for EM (0.59 +/- 0.05eV). Finally, it is shown that, using an optimized PVD Cu seed, standard PVD TaNTa-barriers give excellent TDDB performance and that typical EM lifetime specs can be met with this metallization scheme down to 30nm 1/2 pitch.
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