Single Crystalline Ge1.xMnx Nanowires as Building Blocks for Nanoelectronics

被引：58

作者：

van der Meulen, Machteld I. ^{[1
,2
,3
]}

Petkov, Nikolay ^{[1
,2
,3
]}

Morris, Michael A. ^{[1
,2
,3
]}

Kazakova, Olga ^{[4
]}

Han, Xinhai ^{[5
]}

Wang, Kang L. ^{[5
]}

Jacob, Ajey P. ^{[6
]}

Holmes, Justin D. ^{[1
,2
,3
]}

机构：

[1] Natl Univ Ireland Univ Coll Cork, Dept Chem, Mat & Supercrit Fluids Grp, Cork, Ireland

[2] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[3] Trinity Coll Dublin, CRANN, Dublin 2, Ireland

[4] Natl Phys Lab, Teddington TW11 0LW, Middx, England

[5] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USA

[6] Intel Corp, Technol & Mfg Grp External Programs, Santa Clara, CA 95052 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 01期

基金：

爱尔兰科学基金会;

关键词：

GERMANIUM NANOWIRES; SURFACE-CHEMISTRY; NANOPARTICLES; MN3O4; GROWTH; FERROMAGNETISM; SEMICONDUCTORS; MN;

D O I：

10.1021/nl802114x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.

引用

页码：50 / 56

页数：7

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