Dependence of the ion sputtering rate on the light-induced change in the work function of heterophase semiconductors

被引：5

作者：

Rokakh, A. G. ^{[1
]}

Stetsyura, S. V. ^{[1
]}

Zhukov, A. G. ^{[1
]}

Serdobintsev, A. A. ^{[1
]}

机构：

[1] Saratov NG Chernyshevskii State Univ, Saratov, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2006年 / 32卷 / 01期

关键词：

Mass Spectrometry; Work Function; White Light; Relative Yield; Semiconductor Film;

D O I：

10.1134/S106378500601010X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoconducting polycrystalline CdS-PbS heterophase semiconductor films have been studied by secondary-ion mass spectrometry (SIMS). The SIMS measurements were performed on samples illuminated with white light at various intensities. The observed dependence of the relative yield of positive secondary ions on the luminance is analytically described and theoretically explained in terms of the light-induced change in the work function of the semiconductor.

引用

页码：30 / 32

页数：3

共 50 条

[1] Dependence of the ion sputtering rate on the light-induced change in the work function of heterophase semiconductors
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Technical Physics Letters, 2006, 32 : 30 - 32
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