A Very Low Specific On-resistance High-voltage SOI Lateral MOSFET

A silicon-on-insulator buried layer multiple trenches (SOI BMT) metal-oxide-semiconductor-field-effect -transistor (MOSFET) with very low specific on-resistance (R-on,R-sp) is proposed in this paper. Based on the research of the SOT multiple trenches MOSFET (SOI MT MOSFET) with low R-on,R-sp an P-type buried layer is introduced on top of the BOX in the proposed structure, which increases the doping concentration in the N-drift region and further reduces R-on,R-sp. The very low R-on,R-sp of 6.8 m Omega.cm(2) with BV of 345 V for SOT BMT MOSFET is hence obtained by 2-D simulation TCAD TOOL MEDICI. Comparing with the SOT MT MOSFET, R-on,R-sp is reduced by 12%, and BV is not deteriorated.