Formation of high-density silicon dots on a silicon-on-insulator substrate

被引：17

作者：

Tabe, M ^{[1
]}

Kumezawa, M ^{[1
]}

Yamamoto, T ^{[1
]}

Makita, S ^{[1
]}

Yamaguchi, T ^{[1
]}

Ishikawa, Y ^{[1
]}

机构：

[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 142卷 / 1-4期

关键词：

silicon; X-ray photoelectron spectroscopy; atomic force microscopy; silicon nitride; silicon dot;

D O I：

10.1016/S0169-4332(98)00703-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-density and nanometer-scale Si dots were fabricated on a silicon-on-insulator substrate by a non-lithography process, consisting of SiN island nucleation and subsequent Si etching-mode oxidation in a vacuum. It was found from X-ray photoelectron spectroscopy and atomic force microscopy that, during oxidation, the SiN islands serve as oxidation masks, and only bare Si regions are etched by oxygen, resulting in formation of Si dots. The lateral size and the height of Si dot are primarily determined by the SST masks and thickness of the top Si layer, respectively. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：553 / 557

页数：5

共 50 条

[1] Silicon-on-insulator (SOI): A path to high-density siliicon optoelectronics?
Green, MA
2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2004, : 154 - 155
[2] The formation of high-density uniform silicon nanocrystals on insulator substrate and their surface morphology
Li, X
Wang, XW
Li, XF
Qiao, F
Mei, JX
Li, W
Xu, J
Huang, XF
Chen, KJ
ACTA PHYSICA SINICA, 2004, 53 (12) : 4293 - 4298
[3] Thermally assisted formation of silicon islands on a silicon-on-insulator substrate
Legrand, B
Agache, V
Mélin, T
Nys, JP
Senez, V
Stiévenard, D
JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) : 106 - 111
[4] Thermal oxidation of silicon-on-insulator dots
Prins, FE
Single, C
Zhou, F
Heidemeyer, H
Kern, DP
Plies, E
NANOTECHNOLOGY, 1999, 10 (02) : 132 - 134
[5] Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate
Horibe, Kosuke
Kodera, Tetsuo
Oda, Shunri
APPLIED PHYSICS LETTERS, 2015, 106 (08)
[6] Pattern formation on silicon-on-insulator
Flack, FS
Yang, B
Huang, M
Marcus, M
Simmons, J
Castellini, OM
Eriksson, MA
Liu, F
Lagally, MG
Kinetics-Driven Nanopatterning on Surfaces, 2005, 849 : 139 - 147
[7] Fabrication of a Silicon Nanowire Solar Cell on a Silicon-on-Insulator Substrate
Kato, Shinya
Kurokawa, Yasuyoshi
Gotoh, Kazuhiro
Soga, Tetsuo
APPLIED SCIENCES-BASEL, 2019, 9 (05):
[8] Strained-silicon formation on relaxed silicon-germanium/silicon-on-insulator substrate using laser annealing
Mishima, Y
Ochimizu, H
Mimura, A
APPLIED PHYSICS LETTERS, 2005, 86 (07) : 1 - 2
[9] A silicon-on-insulator transistor resistant to substrate potential
Oblea, A.
Hayhurst, R.
Wilson, D.
Hackler, D.
2007 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES, 2007, : 25 - 26
[10] Integrated microwave inductors on silicon-on-insulator substrate
Huynen, I
Raskin, JP
Gillon, R
Vanhoenacker, D
Colinge, JP
27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II, 1997, : 1008 - 1013

← 1 2 3 4 5 →