Design of Schmitt Trigger Logic Gates Using DTMOS for Enhanced Electromagnetic Immunity of Subthreshold Circuits

被引:11
|
作者
Kim, Kyungsoo [1 ]
Kim, SoYoung [1 ]
机构
[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea
基金
新加坡国家研究基金会;
关键词
Digital circuits; electromagnetic interference (EMI); hysteresis; immunity; Schmitt trigger; EMI SUSCEPTIBILITY;
D O I
10.1109/TEMC.2015.2427992
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents subthreshold digital circuit design and optimization method using Schmitt trigger logic gates for enhanced electromagnetic immunity. The proposed Schmitt trigger logic gates are based on a buffer design using dynamic threshold-voltage MOS for low-power operation. By expanding the Schmitt trigger to NAND/NOR gate, we can dramatically improve the noise immunity with much lower switching power consumption and significant area reduction compared with CMOS Schmitt triggers, at the expense of a slight increase in delay. Not only for the gate level, but also the circuit level immunity improvement is verified with ISCAS 85 benchmark. In addition, we propose a parameter to determine the optimal noise immunity considering the trade-off between immunity and performance. By using the proposed parameter, optimal hysteresis can be chosen for the reasonable performance deterioration.
引用
收藏
页码:963 / 972
页数:10
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