Electronic structure of Sb on InP(110) surface studied theoretically

被引：4
|
作者：
Wang, SY [1 ]
Jia, Y
Shi, SZ
Ma, BX
Chen, LY
机构：
[1] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[2] Zhengzhou Univ, Sch Phys & Technol, Zhengzhou 450052, Peoples R China
[3] N China Inst Water Conserveancy & Hydroelect Powe, Zhengzhou 450045, Peoples R China
来源：
ACTA PHYSICA SINICA | 1999年 / 48卷 / 07期
关键词：
D O I：
10.7498/aps.48.1334
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Based on the tight binding scattering theoretical method, the electronic structure of Sb adsorped on the surface of InP(110) is studied. Surface states and surface resonances are identified from the calculated local density of states along the four zone boundaries of the (110) surface Brillouin zone. Some results are in good agreement with the experiment and better than other theoretical results.
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收藏
页码：1334 / 1339
页数：6
相关论文
共 9 条
  • [1] UNOCCUPIED SURFACE-STATES OF (1X1) SB OVERLAYERS ON GAAS(110) AND INP(110)
    DRUBE, W
    HIMPSEL, FJ
    [J]. PHYSICAL REVIEW B, 1988, 37 (02): : 855 - 857
  • [2] Harrison W.A., 1980, Electronic Structure and the Properties of Solids: The Physics of the Chemical Bond
  • [3] SB OVERLAYERS ON (110) SURFACES OF III-V-SEMICONDUCTORS - TOTAL-ENERGY MINIMIZATION AND SURFACE ELECTRONIC-STRUCTURE
    MAILHIOT, C
    DUKE, CB
    CHADI, DJ
    [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2213 - 2229
  • [4] OPTICAL-PROPERTIES OF SB-TERMINATED GAAS AND INP(110) SURFACES
    SANTOS, PV
    ESSER, N
    CARDONA, M
    SCHMIDT, WG
    BECHSTEDT, F
    [J]. PHYSICAL REVIEW B, 1995, 52 (16) : 12158 - 12167
  • [5] SCATTERING-THEORETICAL METHOD FOR RELAXED AND RECONSTRUCTED SURFACES WITH APPLICATIONS TO GAAS(110) AND SI(100)-(2X1)
    SCHMEITS, M
    MAZUR, A
    POLLMANN, J
    [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 5012 - 5031
  • [6] ELECTRONIC STATES ON INP(110)-SB(1 ML)
    SRIVASTAVA, GP
    MARTIN, RP
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (08) : 2009 - 2026
  • [7] STRINGER C, 1983, VACUUM, V3, P1484
  • [8] A SEMI-EMPIRICAL TIGHT-BINDING THEORY OF THE ELECTRONIC-STRUCTURE OF SEMICONDUCTORS
    VOGL, P
    HJALMARSON, HP
    DOW, JD
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (05) : 365 - 378
  • [9] 王松有, 1998, 物理学报, V47, P1695
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