Dim C60 fullerenes on Si(111) √3 x √3-Ag surface

被引:10
|
作者
Gruznev, D. V. [1 ,2 ]
Matetskiy, A. V. [1 ,2 ]
Bondarenko, L. V. [1 ,2 ]
Zotov, A. V. [1 ,2 ,3 ]
Saranin, A. A. [1 ,2 ]
Chou, J. P. [4 ]
Wei, C. M. [4 ]
Wang, Y. L. [4 ]
机构
[1] Inst Automat & Control Proc, Vladivostok 690041, Russia
[2] Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia
[3] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, Russia
[4] Acad Sinica, Inst Atom & Mol Sci, Taipei, Taiwan
基金
俄罗斯基础研究基金会;
关键词
Atom-solid interactions; Silicon; Fullerene; Surface diffusion; Scanning tunneling microscopy; Density functional calculations; ADSORPTION; SUBSTRATE;
D O I
10.1016/j.susc.2013.02.007
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Scanning tunneling microscopy (STM) observations of the close-packed C-60 fullerene arrays on Si(111) root 3 x root 3 - Ag surface have revealed the presence of dim C-60 molecules which constitute 9-12% of all fullerenes. The dim C-60 fullerenes reside similar to 1.6 angstrom lower than the bright ("normal") C-60. While the bright C-60 are in continuous rotation, the dim C-60 are fixed in one of the single orientations, indicating a more tight bonding to the surface. At room temperature (RT), the dynamic switching from bright to dim C-60 and vice versa has been detected. Switching slows down with decreasing temperature and becomes completely frozen at 110 K, which implies that the switching is a thermally driven process. RT deposition of similar to 0.1 monolayer of Ag onto C-60 array eliminates completely the dim C-60 molecules. Experimental results can be understood if one assumes that formation of the dim C-60 is associated with disintegration of Ag trimer on Si(111) root 3 x root 3 - Ag surface under a given C-60 fullerene. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:31 / 36
页数:6
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