Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition

被引：0
|
作者：
Joseph, M [1 ]
Tabata, H [1 ]
Kawai, T [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 567, Japan
来源：
FERROELECTRIC THIN FILMS VII | 1999年 / 541卷
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of Li-doped ZnO of different compositions (Zn1-xLix)O, x=0.1, 0.17 and 0.3 have been prepared on Si(100) substrate for the first time by pulsed laser deposition. These films are characterized for their structural, surface morphology and ferroelectric nature. A memory window of 1.2V has been observed in capacitance-voltage measurement.
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页码：517 / 521
页数：5
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