Polarization relaxation in PZT/PLZT thin film capacitors

Polarization relaxation in PZT and PLZT (with La concentration from 0% to 10%) thin film capacitors was characterized in the time range from 10 ns to 1000 s. It was found that at zero volt the polarization in PZT and PLZT thin films changes logarithmically with time, P(t) = b log(t)+ P-0, and the polarization current density J(t) = dP(t)/dt obeys the Curie-von Schweidler Law, J(t) = b . t(-n), with n = 1 from 100 ns extending to 10 s. Over 10 s, the exponent n in the J-t relationship becomes less than 1. The coefficient b in the Q-t and J-t relationship at zero volt correlates strongly with the remanent polarization. La doping in PZT reduces remanent polarization and reduces relaxation.