Compact quantum model for a silicon MOS tunnel diode

被引：4
|
作者：
Vexler, MI
Asli, N
Shulekin, AF
Meinerzhagen, B
Seegebrecht, P
机构：
[1] Univ Bremen, Inst Theoret Elektrotech & Microelektron, D-28334 Bremen, Germany
[2] Univ Kiel, Tech Fak, Lehrstuhl Halbleitertech, D-24143 Kiel, Germany
[3] AF Ioffe Phys Tech Inst, Power Elect Div, St Petersburg 194021, Russia
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期
关键词：
MOS structure; tunnel current; compact model; ground quantum level; accumulation; inversion;
D O I：
10.1016/S0167-9317(01)00660-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple model for the simulation of the potential distribution and tunnel currents in MOS structures with metal or poly-Si gate electrodes is proposed. Only the ground quantum state of particles near the Si/SiO2 interfaces is considered. The model is applicable for all bias conditions and any doping density within Si and poly-Si. Good agreement with experimental data and more refined theories is demonstrated. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：161 / 166
页数：6
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