Properties of grain boundaries in laser-crystallized silicon thin films

被引：8
|
作者：
Eisele, C [1 ]
Bach, T [1 ]
Nebel, CE [1 ]
Stutzmann, M [1 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷
关键词：
The authors would like to thank Markus Berger for the Hall measurements and Bohuslav Rezek for his assistance in the LBIC measurements. This work was funded by the Bundesministerium für Forschung und Bildung under the contract no. BEO 0329814;
D O I：
10.1016/S0022-3093(01)00978-4
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Laser crystallization of thin amorphous silicon films was done using a two-beam-interference and a more complex holographic crystallization technique to stimulate lateral grain growth. The preparation and application of the digital holograms used for this purpose is described. The grain boundaries dominate the electronic transport in both cases. Single grain boundaries are identified. and a diffusion length up to 1 mum is determined by laser beam induced current (LBIC) measurements. The grain boundary barrier height is determined for both crystallization techniques and is between 120 and 380 meV. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：726 / 730
页数：5
相关论文
共 50 条
  • [1] Nature of grain boundaries in laser crystallized polycrystalline silicon thin films
    Christiansen, S
    Lengsfeld, P
    Krinke, J
    Nerding, M
    Nickel, NH
    Strunk, HP
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) : 5348 - 5354
  • [2] Microstructure of laser-crystallized silicon thin films on glass substrate
    Nerding, M
    Dassow, R
    Christiansen, S
    Köhler, JR
    Krinke, J
    Werner, JH
    Strunk, HP
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) : 4125 - 4130
  • [3] DEEP LEVELS IN CW LASER-CRYSTALLIZED SILICON THIN-FILMS
    JOHNSON, NM
    MOYER, MD
    FENNELL, LE
    APPLIED PHYSICS LETTERS, 1982, 41 (06) : 560 - 563
  • [4] Enhanced Absorption in Laser-Crystallized Silicon Thin Films on Textured Glass
    Pakhuruddin, Mohd Zamir
    Huang, Jialiang
    Dore, Jonathan
    Varlamov, Sergey
    IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 6 (04): : 852 - 859
  • [5] Device simulation of grain boundaries with oxide-silicon interface roughness in laser-crystallized polycrystalline silicon thin-film transistors
    Kimura, Mutsumi
    Eguchi, Tsukasa
    Inoue, Satoshi
    Shimoda, Tatsuya
    Japanese Journal of Applied Physics, Part 2: Letters, 2000, 39 (8 A):
  • [6] Light Absorption Enhancement in Laser-Crystallized Silicon Thin Films on Textured Glass
    Pakhuruddin, Mohd Zamir
    Huang, Jialiang
    Dore, Jonathan
    Varlamov, Sergey
    IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 6 (01): : 159 - 165
  • [7] Device simulation of grain boundaries with oxide-silicon interface roughness in laser-crystallized polycrystalline silicon thin-film transistors
    Kimura, M
    Eguchi, T
    Inoue, S
    Shimoda, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (8A): : L775 - L778
  • [8] Texture development and grain boundary faceting in an excimer laser-crystallized silicon thin film
    Lee, Sung Bo
    Moon, Jaehyun
    Chung, Choong-Heui
    Kim, Yong-Hae
    Lee, Jin Ho
    Choi, Duck-Kyun
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (05): : 2322 - 2325
  • [9] Grain-boundary defects in laser-crystallized polycrystalline silicon
    Nickel, NH
    Anderson, GB
    Johnson, RI
    PHYSICAL REVIEW B, 1997, 56 (19) : 12065 - 12068
  • [10] Improvement of grain-growth and surface roughness in laser-crystallized polycrystalline silicon films
    Choi, HS
    Park, CM
    Jeon, JH
    Min, BH
    Han, MK
    POLYCRYSTALLINE THIN FILMS - STRUCTURE, TEXTURE, PROPERTIES AND APPLICATIONS III, 1997, 472 : 421 - 426
12345