Enhanced Thermoelectric Properties of Boron-Substituted Single-Walled Carbon Nanotube Films

被引：15
|
作者：
Chiang, Wei-Hung [1 ]
Iihara, Yu [2 ]
Li, Wei-Ting [1 ]
Hsieh, Cheng-Yu [3 ]
Lo, Shen-Chuan [3 ]
Goto, Chigusa [2 ]
Tani, Atsushi [2 ]
Kawai, Tsuyoshi [2 ]
Nonoguchi, Yoshiyuki [2 ,4 ]
机构：
[1] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 10607, Taiwan
[2] Nara Inst Sci & Technol, Div Mat Sci, Ikoma 6300192, Japan
[3] Ind Technol Res Inst, Mat & Chem Res Labs, Hsinchu 30013, Taiwan
[4] PRESTO, JST, Kawaguchi, Saitama 3320012, Japan
来源：
ACS APPLIED MATERIALS & INTERFACES | 2019年 / 11卷 / 07期
关键词：
doping; carbon nanotubes; thermoelectrics; waste heat; energy harvesting; POWER-FACTOR; DOPED CARBON; MODULATION; EFFICIENT; DOPANT;
D O I：
10.1021/acsami.8b14616
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Atomic doping is the most fundamental approach to modulating the transport properties of carbon nanotubes. In this paper, we demonstrate the enhanced thermoelectric properties of boron-substituted single-walled carbon nanotube (B-SWCNT) films. The developed two-step synthesis of large quantities of B-SWCNTs readily enables the measurements of thermoelectricity of bulk B-SWCNT films. Complementary structural characterization implies the unique configuration of boron atoms at the doping sites of SWCNTs, successfully enabling carrier doping to SWCNTs. The developed boron substitution, in combination with chemical doping, is found to substantially improve the thermoelectric properties.
引用
收藏
页码：7235 / 7241
页数：7
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