Anisotropic propagation of light in planar waveguides containing InGaAs-InP quantum wells

被引:2
|
作者
Guettler, T
Krebs, O
Voisin, P
Faini, G
Rondi, D
Alibert, C
机构
[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75005 Paris, France
[2] CNRS, Microstruct & Microelect Lab, F-92220 Bagneux, France
[3] Thomson CSF, Cent Rech Lab, F-91400 Orsay, France
[4] Ctr Elect & Microelect Montpellier, F-34000 Montpellier, France
关键词
D O I
10.1063/1.124862
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the observation of anisotropy of the propagation index with respect to propagation direction in planar waveguides containing InGaAs-InP quantum wells. We discuss the relation between this effect and the recently discovered in-plane polarization anisotropy of the absorption observed for light propagating along the growth axis. (C) 1999 American Institute of Physics. [S0003-6951(99)05137-2].
引用
收藏
页码:1890 / 1892
页数:3
相关论文
共 50 条
  • [1] OPTICAL INVESTIGATION OF INGAAS-INP QUANTUM WELLS
    MORONI, D
    PATILLON, JN
    MENU, EP
    GENTRIC, P
    ANDRE, JP
    JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 143 - 146
  • [2] PHOTOLUMINESCENCE INVESTIGATION OF INGAAS-INP QUANTUM-WELLS
    MORONI, D
    ANDRE, JP
    MENU, EP
    GENTRIC, P
    PATILLON, JN
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 2003 - 2008
  • [3] Investigation of InGaAs-InP quantum wells by optical spectroscopy
    Skolnick, MS
    Tapster, PR
    Bass, SJ
    Pitt, AD
    Apsley, N
    Aldred, SP
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) : 29 - 40
  • [4] DISORDERING OF INGAAS-INP QUANTUM WELLS BY SI IMPLANTATION
    TELL, B
    JOHNSON, BC
    ZYSKIND, JL
    BROWN, JM
    SULHOFF, JW
    BROWNGOEBELER, KF
    MILLER, BI
    KOREN, U
    APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1428 - 1430
  • [5] Anisotropic interfacial strain in InP/InGaAs/InP quantum wells
    Lakshmi, B
    Cassidy, DT
    Robinson, BJ
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) : 5739 - 5742
  • [6] FREE CARRIER EFFECTS ON THE OPTICAL-PROPERTIES OF INGAAS-INP QUANTUM WELLS
    SAKER, MK
    SKOLNICK, MS
    CLAXTON, PA
    ROBERTS, JS
    KANE, MJ
    SUPERLATTICES AND MICROSTRUCTURES, 1989, 6 (03) : 319 - 322
  • [7] Spin-splitting of the subbands of InGaAs-InP and other 'no common atom' quantum wells
    Vervoort, L
    Ferreria, R
    Voisin, P
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (03) : 227 - 230
  • [8] PHOTOLUMINESCENCE AND MAGNETO-TRANSPORT OF WIDE INGAAS-INP MODULATION DOPED QUANTUM WELLS
    SIMMONDS, PE
    SKOLNICK, MS
    TAYLOR, LL
    BASS, SJ
    NASH, KJ
    SOLID STATE COMMUNICATIONS, 1988, 67 (12) : 1151 - 1155
  • [9] SUBPICOSECOND LUMINESCENCE STUDY OF CARRIER TRANSFER IN INGAAS-INP MULTIPLE QUANTUM-WELLS
    KERSTING, R
    ZHOU, XQ
    WOLTER, K
    GRUTZMACHER, D
    KURZ, H
    SUPERLATTICES AND MICROSTRUCTURES, 1990, 7 (04) : 345 - 348
  • [10] Optical properties of an InGaAs-InP interdiffused quantum well
    Li, EH
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (06) : 982 - 990