Direct Writing Of High Frequency Surface Acoustic Waves Using Focus Ion Beam Etching.

被引:0
|
作者
Salut, R. [1 ]
Majjad, H. [1 ]
Daniau, W. [1 ]
Ballandras, S. [1 ]
机构
[1] Inst FEMTO ST, Dept LPMO, F-25044 Besancon, France
关键词
SAW; Focused Ion Beam (FIB) etching; Radio-Frequency (RF) operation;
D O I
暂无
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
The fabrication of Radio-Frequency Surface Acoustic Wave devices is mainly based on lithography techniques allowing for accurate and repetitive mass production of resonators and filters. The possibility of manufacturing single devices operating at the very limit of material properties for research purposes has been demonstrated using Electron-beam lithography machines, allowing to largely overcome the 10 GHz threshold. In this paper, we propose an original alternative to lithography techniques based on the Focused Ion Beam etching technique to fabricate SAW devices by directly "writing" the electrode pattern in the metal overlay. The fundaments of this technology are exposed in the first section of the paper. Examples of devices are then shown, illustrating the quality of the processed devices and the capability to fabricate accurate sub-micron patterns. After characterizing the fabricated devices, the conclusion will discuss the expected limit of such an approach for the fabrication of SAW devices.
引用
收藏
页码:2285 / 2288
页数:4
相关论文
共 50 条
  • [1] Direct writing of high frequency surface acoustic wave devices on epitaxial Pb(Zr0.20Ti0.80)O3 thin layers using focus ion beam etching
    Salut, R.
    Daniau, W.
    Ballandras, S.
    Gariglio, S.
    Triscone, G.
    Triscone, J. -M.
    PROCEEDINGS OF THE 2007 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM-JOINTLY WITH THE 21ST EUROPEAN FREQUENCY AND TIME FORUM, VOLS 1-4, 2007, : 737 - +
  • [2] Direct writing of high frequency surface acoustic wave devices on epitaxial Pb(Zr0.20Ti0.80)O3 thin layers using focus ion beam etching
    Salut, R.
    Gariglio, S.
    Daniau, W.
    Majjad, H.
    Triscone, G.
    Triscone, J. -M.
    Ballandras, S.
    FERROELECTRICS, 2008, 362 : 105 - 114
  • [3] FINE PATTERN FABRICATION USING ION BEAM ETCHING.
    Furuya, Shigeru
    Kobayashi, Koichi
    Yamamoto, Sumio
    Fujitsu Scientific and Technical Journal, 1979, 15 (04): : 111 - 120
  • [4] FABRICATION OF SCHOTTKY DEVICES ON P-TYPE SILICON USING ION BEAM ETCHING.
    Auret, F.D.
    Bojarczuk, N.A.
    Paz, O.
    IBM technical disclosure bulletin, 1984, 27 (03):
  • [5] Microfluidic particle manipulation using high frequency surface acoustic waves
    Ai, Ye
    MICROFLUIDICS, BIOMEMS, AND MEDICAL MICROSYSTEMS XV, 2017, 10061
  • [7] NEW SELF-ALIGNED RECESSED-GATE GaAs MESFET USING RIBE (REACTIVE ION BEAM ETCHING) FOR RECESS ETCHING.
    Imai, Yuhki
    Ohwada, Kuniki
    Imamura, Yoshihiro
    Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (, 1987, E70 (10): : 975 - 980
  • [8] HIGH-FREQUENCY MODULATION OF ION-ACOUSTIC WAVES
    ALBRIGHT, NW
    PHYSICS OF FLUIDS, 1972, 15 (11) : 2013 - &
  • [9] DIRECT FREQUENCY MODULATION OF A SEMICONDUCTOR LASER BY SURFACE ACOUSTIC WAVES.
    Greenhalgh, P.A.
    Davies, P.A.
    1600, (21):
  • [10] High-frequency X-ray beam chopper based on diffraction by surface acoustic waves
    Tucoulou, R
    Roshchupkin, DV
    Mathon, O
    Schelokov, IA
    Brunel, M
    Ziegler, E
    Morawe, C
    JOURNAL OF SYNCHROTRON RADIATION, 1998, 5 : 1357 - 1362