Growth control of GaAs epilayers with specular surface on nonmisoriented (111)B substrates by MBE

被引：1
|
作者：
Yang, Ruixia [1 ]
Wu, Yibin [2 ]
Niu, Chenliang [1 ]
Yang, Fan [1 ,2 ]
机构：
[1] Hebei Univ Technol, Sch Informat Engn, Tianjin 300130, Peoples R China
[2] 13th Elect Res Inst, CETC, Shijiazhuang 050051, Peoples R China
来源：
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) | 2010年 / 27卷 / 01期
关键词：
EPITAXIAL-GROWTH; DENSITY; GAAS(111)B; REDUCTION;
D O I：
10.1149/1.3360643
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
GaAs epilayers with specular surface are successfully obtained on nonmisoriented GaAs(111)B substrates by conventional MBE. The growth control achieved via in situ, real time monitoring of the specular beam intensity of reflection high-energy electron diffraction (RHEED) on static and dynamic GaAs(111)B surfaces is reported. The dependence of GaAs(111)B surface reconstruction phases on growth parameters is discussed. The proper starting surface phase (root 19x root 19) is identified by RHEED for the growth of mirror-smooth epilayers. Growth conditions are optimized in terms of the static surface phase diagram and the temporal RHEED intensity.
引用
收藏
页码：351 / 357
页数：7
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