diode laser;
implant;
marginal bone loss;
early loading;
LOW-POWER LASER;
IRRADIATION;
RATS;
D O I:
暂无
中图分类号:
Q [生物科学];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
Aim: Evaluation of the effect of diode laser irradiation on crestal bone preservation around early loaded dental implants (used for single tooth replacement) clinically and radiographically. Patients and Methods: Eight patients need a bilateral implant placement were included in this study. Implant placed in one side was exposed to diode laser immediately; 4 days and 7 days after insertion of the implants. The other side was not exposed to the laser. The implants were loaded for 6-8 weeks. The patients were followed up clinically and radiographically at time of abutment placement and then at three, and six months. Results: Minimal amount of marginal bone resorption around the implants was noticed in the lased side more than in the non-lased side. Conclusions: The application of the diode laser to the endosseous implant can preserve the bone around the implant and may aid in improving the longevity of the implants. [Khalid E El-Kholey, Hanaa El-Shenaway. Role Of Diode Laser In Preservation Of The Marginal Bone Around Early Loaded Endosseous Implant. Life Sci J 2012; 9(3):940-943]. (ISSN:1097-8135). http://www.lifesciencesite.com. 134