Role Of Diode Laser In Preservation Of The Marginal Bone Around Early Loaded Endosseous Implant

被引:0
|
作者
El-Kholey, Khalid E. [1 ]
El-Shenaway, Hanaa [2 ]
机构
[1] IbinSina Coll, Dept Oral & Maxillofacial Surg, Jeddah, Saudi Arabia
[2] Natl Res Ctr, Dept Oral Med, Orodent Res Div, Cairo, Egypt
关键词
diode laser; implant; marginal bone loss; early loading; LOW-POWER LASER; IRRADIATION; RATS;
D O I
暂无
中图分类号
Q [生物科学];
学科分类号
07 ; 0710 ; 09 ;
摘要
Aim: Evaluation of the effect of diode laser irradiation on crestal bone preservation around early loaded dental implants (used for single tooth replacement) clinically and radiographically. Patients and Methods: Eight patients need a bilateral implant placement were included in this study. Implant placed in one side was exposed to diode laser immediately; 4 days and 7 days after insertion of the implants. The other side was not exposed to the laser. The implants were loaded for 6-8 weeks. The patients were followed up clinically and radiographically at time of abutment placement and then at three, and six months. Results: Minimal amount of marginal bone resorption around the implants was noticed in the lased side more than in the non-lased side. Conclusions: The application of the diode laser to the endosseous implant can preserve the bone around the implant and may aid in improving the longevity of the implants. [Khalid E El-Kholey, Hanaa El-Shenaway. Role Of Diode Laser In Preservation Of The Marginal Bone Around Early Loaded Endosseous Implant. Life Sci J 2012; 9(3):940-943]. (ISSN:1097-8135). http://www.lifesciencesite.com. 134
引用
收藏
页码:940 / 943
页数:4
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