A Ultra-Wideband Empirical Large-Signal Model for AlGaAs/GaAs HEMTs

被引：0
|
作者：
Jia, Yonghao [1 ]
Xu, Yuehang [1 ]
Zhao, Xiaodong [1 ]
Wang, Changsi [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China
来源：
2016 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2016年
关键词：
microwave and millimeter wave; Ultrawideband large signal model; GaAs HEMT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An accurate large-signal GaAs HEMT modeling is very important for microwave and millimeter wave power MMIC amplifier design. This paper presents a complete GaAs HEMT model suitable for ultra-wide band application. The model is realized with an improved drain current (Ids) formulation with self-heating and charge trapping modification. This large-signal GaAs HEMT modeling is validated for a wideband frequency from 12GHz to 40GHz and can predict fundamental output power, gain, and power added efficiency accurately.
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页数：3
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