Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

被引：0

作者：

Lee, M. H. ^{[1
]}

Chen, K-T. ^{[1
]}

Liao, C-Y. ^{[1
]}

Gu, S-S. ^{[1
]}

Siang, G-Y. ^{[1
]}

Chou, Y-C. ^{[1
]}

Chen, H-Y. ^{[1
]}

Le, J. ^{[1
]}

Hong, R-C. ^{[1
]}

Wang, Z-Y. ^{[1
]}

Chen, S-Y. ^{[1
]}

Chen, P-G. ^{[2
]}

Tang, M. ^{[3
]}

Lin, Y-D. ^{[4
]}

Lee, H-Y. ^{[4
]}

Li, K-S. ^{[2
]}

Liu, C. W. ^{[5
]}

机构：

[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei, Taiwan

[2] Natl Nano Device Labs, Hsinchu, Taiwan

[3] PTEK Technol Co Ltd, Device Design Div, Hsinchu, Taiwan

[4] Ind Technol Res Inst, Elect & Optoelect Syst Res Labs, Hsinchu, Taiwan

[5] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei, Taiwan

来源：

2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Extremely steep switch of negative-capacitance (NC) Nanosheet (NS) GAA-FETs and FinFETs are experimentally presented with SSavg/SSmin=22/14mV/dec and SSavg/SSmin=38/21mV/dec, respectively. The sub -60mV/dec current magnitude of sub-60mV/dec is >4 and similar to 5 decades for NC-NSGAA and NC-FinFET, respectively. Both NC-NSGAA and NC-FinFET exhibit extremely steep switch behavior due to FET scale down to nano-scale and comparable domain size of polycrystalline HZO. The dramatic current switch with steep slope is measured with only several dipole domains flipping over with gate voltage applied. The apparent Negative-DIBL and NDR (Negative Differential Resistance) are observed due to strong NC boost. The SS depends on W-Fin/L ratio, and W-Fin < L is the solution to achieve sub-60mV/dec. The super-steep slope on current behavior still occurs after multiple DC sweep. The uniform size of each NS for stacked NC-NSGAA is an important issue to optimize the NC effect with SS=19mV/dec due to single T-NS for capacitance matching by modeling.

引用

页数：4

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