Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure

被引：5

作者：

Aleshkin, V. Ya ^{[1
]}

Dubinov, A. A. ^{[1
]}

Gavrilenko, L. V. ^{[1
]}

Krasilnik, Z. F. ^{[1
]}

Kuritsyn, K. I. ^{[1
]}

Kryzhkov, D. I. ^{[1
]}

Morozov, S. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

CARRIER; SEMICONDUCTORS; FEMTOSECOND; CAPTURE;

D O I：

10.1134/S1063782612070032

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of experimental studies of the subpicosecond relaxation dynamics of photoexcited charge carriers in an In0.22Ga0.78As/GaAs quantum-well heterostructure are reported. From photoluminescence studies of the structure by the upconversion technique, the cooling rate of charge carriers in the quantum well and the time of charge-carrier trapping into the well are estimated to be similar to 1 ps at 300 K and at similar to 6.5 ps at 10 K.

引用

页码：917 / 920

页数：4

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