Electro-deoxidation of thin silica layer in molten salt-Globular structures with effective light absorbance

被引:21
|
作者
Juzeliunas, Eimutis [1 ]
Cox, Antony [1 ]
Fray, Derek J. [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
基金
英国工程与自然科学研究理事会;
关键词
Black silicon; Porous silicon; Molten salts; Deoxidation; SOLID SIO2; ELECTROCHEMICAL REDUCTION; 3-PHASE INTERLINES; DIOXIDE; OXIDES; STATE; CELLS; CACL2;
D O I
10.1016/j.electacta.2012.02.054
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
This paper describes the electrochemical deoxidation of thin silica layer on silicon in molten salts. The oxide, 2 mu m in thickness, is formed on p-type silicon by thermal oxidation and electro-deoxidized in molten calcium chloride at 850 degrees C. Distinctive surface architectures are obtained composed of spheres, nano-fibres and pores. The electro-deoxidized surfaces are formed, which absorb light up to 92% in the visible region of spectrum. This black silicon is attractive in many fields of application where specifically high silicon surface to volume ratio is of importance, in particular, in production of antireflection coatings in solar cells. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:123 / 127
页数:5
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