A Novel Approach for Piezoresistivity Characterization of Silicon Nanowires

被引：0
|
作者：
Nie, M. [1 ,2 ]
Santagata, F. [1 ]
Moh, T. [1 ]
Sarro, P. M. [1 ]
Nie, M. [1 ,2 ]
Huang, Qing-An [2 ]
机构：
[1] Delft Univ Technol, Dept Microelect, Delft, Netherlands
[2] Southeast Univ, Key Lab MEMS Minist Educ, Nanjing 210096, Peoples R China
来源：
2012 IEEE SENSORS PROCEEDINGS | 2012年
基金：
中国国家自然科学基金;
关键词：
GIANT PIEZORESISTANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new measurement approach for high precision characterization of piezoresistance in silicon nanowires (SiNWs) is presented. No dedicated silicon chips with embedded piezoresistors are needed, but the wafer containing the NWs are simply diced in cantilever shaped dies. A conventional cascade probe station and a Thorlabs' manual translation stage are used for the measurements. By measuring the resistance change with and without deflection, the piezoresistive coefficient of NWs with different lengths is extracted. The extracted longitudinal pizeoresistive coefficient pi(1)[110] along < 110 > are reported. The highest value, 188x10-11 Pa-1, is reported for the 8 mu m long NWs.
引用
收藏
页码：1747 / 1750
页数：4
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