Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

被引：0
|
作者：
Aleksiejunas, R. [1 ]
Scajev, P. [1 ]
Nargelas, S. [1 ]
Miasojedovas, S. [1 ]
Jarasiunas, K. [1 ]
Trinkler, L. [2 ]
Grigorjeva, J. [2 ]
Berzina, B. [2 ]
Chen, K. H. [3 ]
Chen, Y. T. [3 ]
Chen, M. W. [3 ]
Chen, L. C. [3 ]
机构：
[1] Vilnius State Univ, Inst Appl Res, Sauletekio Ave 9-3, LT-10222 Vilnius, Lithuania
[2] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia
[3] Natl Taipei Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan
来源：
INTERNATIONAL CONFERENCE ON FUNCTIONAL MATERIALS AND NANOTECHNOLOGIES (FM&NT2012) | 2012年 / 38卷
关键词：
D O I：
10.1088/1757-899X/38/1/012054
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1-xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1-xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.
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页数：5
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