Pt interactions with annealed and chemically-etched Nb-doped SrTiO3(001) surfaces: Metal/oxide surface chemical effects on band bending behavior

被引:12
|
作者
Vamala, Chiranjeevi [1 ]
Manandhar, Sudha [2 ]
Kelber, Jeff [1 ,2 ]
机构
[1] Univ N Texas, Dept Mat Sci & Engn, Denton, TX 76203 USA
[2] Univ N Texas, Dept Chem, Denton, TX 76203 USA
关键词
Perovskite; Strontium titanate; Platinum; Band bending; Schottky barrier; XPS; INTERFACIAL REACTIONS; ALPHA-AL2O3(0001); SRTIO3(100); DEPOSITION; OXYGEN; XPS;
D O I
10.1016/j.susc.2008.10.025
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
XPS and LEED have been used to characterize the interaction of sputter-deposited Pt (maximum coverage <5 ML) with Nb-doped SrTiO3(0 0 1) Surfaces prepared either by annealing in O-2 and then UHV, or by chemical-etching in aqua regia. The annealed surface exhibits all ordered (1 x 1) LEED pattern, with additional diffraction spots and streaks indicating the presence of oxygen vacancies. Increasing Pt coverage results in the decrease of the observed Pt(4f(7/2)) binding energy and the uniform shift of the Sr(3d), Ti(2p) and O(1s) levels to smaller binding energies, as expected for Pt cluster growth and surface-to-Pt charge donation oil ail n-type semiconductor. The etched Surface is disordered, and exhibits a hydroxylated surface with a contaminant C film of similar to 23 angstrom average thickness. Pt deposition oil the etched surface results ill all immediate decrease in the intensity of the OH feature in the O(1s) spectrum, and a uniform shift of the Sr(3d), Ti(2p) and 0( Is) levels to larger binding energies with increasing Pt coverage. The observed Pt(4f(7/2)) binding energy oil the etched surface (similar to 72 eV) is independent of Pt coverage, and indicates Substantial electronic charge donation from the Pt to surface hydroxyl species. The observation of band bending towards higher binding energies upon Pt deposition (behavior normally associated with p-type semiconductors) demonstrates that sub-monolayer quantities of adsorbates call alter metal/oxide interfacial charge transfer and reverse the direction of band bending, with important consequences for Schottky barrier heights and device applications. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:33 / 39
页数:7
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