The effect of CH4/H-2 ECR plasma etching on the electrical properties of p-type Hg1-xCdxTe

被引：3
|
作者：
Baars, J [1 ]
Keller, RC [1 ]
Richter, HJ [1 ]
SeelmannEggebert, M [1 ]
机构：
[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY
来源：
INFRARED DETECTORS FOR REMOTE SENSING: PHYSICS, MATERIALS, AND DEVICES | 1996年 / 2816卷
关键词：
Hg1-xCdxTe; ECR plasma etching; annealing; electrical and thermoelectrical properties;
D O I：
10.1117/12.255157
中图分类号：
TP7 [遥感技术];
学科分类号：
081102 ; 0816 ; 081602 ; 083002 ; 1404 ;
摘要：
引用
收藏
页码：98 / 105
页数：8
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