Towards next generations of Silicon Photonics

被引:0
|
作者
Cremer, S. [1 ]
Baudot, C. [1 ]
Vulliet, N. [1 ]
Durel, J. [1 ]
Durand, C. [1 ]
Petiton, H. [1 ]
Temporiti, E. [2 ]
Boeuf, F. [1 ]
机构
[1] STMicroelectronics, 850 Rue Jean Monnet, F-38920 Crolles, France
[2] STMicroelectronics, Agrate Brianza, Italy
关键词
Optical transceivers; Silicon Photonics;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Process flow and device performances of an industrial 300mm Silicon Photonics platform demonstrating 25Gb/s per data lane when associated with 55nm BICMOS are presented. Advanced designs targeting 56Gb/s and using this platform are introduced. Device improvements suitable to convert such demonstrators into products are shown. Backside reflector, 40GHz photodiode as well as WDM capability are presented as some potential process and device evolutions for future Silicon Photonics platforms. Finally laser integration challenges and opportunities are discussed.
引用
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页码:1 / 4
页数:4
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