Carrier mobility in nonstoichiometric n-Bi2Te3-xSex solid solutions

被引：13
|
作者：
Kutasov, VA
Lukyanova, LN
Konstantinov, PP
Alekseeva, GT
机构：
[1] A. F. Ioffe Physicotechnical Inst., Russian Academy of Sciences
来源：
PHYSICS OF THE SOLID STATE | 1997年 / 39卷 / 03期
关键词：
Spectroscopy; State Physics; Solid Solution; Conduction Band; Carrier Concentration;
D O I：
10.1134/1.1130144
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study has been made of the thermoelectric and galvanomagnetic properties of n-Bi2Te3-xSex solid solutions (x = 0.3 and 0.36) in the temperature range 80-300 K. The lowest carrier concentrations, (0.8-1) x 10(18) cm(-3), were obtained by displacing the solid solution from the stoichiometric to a Te-rich composition. At such carrier concentrations, the second subband in the conduction band of n-Bi2Te3-xSex is not filled, which results in a growth of mobility because of the absence of interband scattering, and brings about an increase of thermoelectric efficiency in the 80-120 K range. (C) 1997 American Institute of Physics.
引用
收藏
页码：419 / 422
页数：4
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