Self-Powered ZnO Nanowire UV Photodetector Integrated With GaInP/GaAs/Ge Solar Cell

被引：20
|
作者：
Hou, Jei Li [1 ,2 ,3 ]
Chang, Shoou Jin [1 ,2 ]
Wu, Chih Hung [3 ]
Hsueh, Ting Jen [4 ]
机构：
[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Res Ctr Energy Technol & Strategy, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Res Ctr Energy Technol & Strategy, Dept Elect Engn, Tainan 70101, Taiwan
[3] Inst Nucl Energy Res, Tao Yuan 325, Taiwan
[4] Natl Nano Devices Labs, Tainan 741, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 08期
关键词：
Nanowire (NW); photodetector (PD); triple-junction (TJ) solar cell; ZnO; GROWTH;
D O I：
10.1109/LED.2013.2269992
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter reports the fabrication of a ZnO nanowire (NW) ultraviolet (UV) metal-semiconductor photodetector (MS-PD) integrated with a GaInP/GaAs/Ge triple-junction (TJ) solar cell. The ZnO NW MS-PD can detect UV light <370 nm. The TJ solar cell transforms solar light to electrical power and provides a bias of 2.5 V to enhance the response of the detector. At this bias, the UV-to-visible (370 to 500 nm) rejection ratio of the ZnO NW MS-PD is similar to 218 and the measured responsivity is 3.39 x 10(-4) A/W. In addition, the dynamic response of the ZnO NW MS-PD under the UV light illumination of 370 nm is stable and reproducible with an ON/OFF current ratio of similar to 1000.
引用
收藏
页码：1023 / 1025
页数：3
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