Magnetic field effects - Superconducting materials;
D O I:
10.1063/5.0104055
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
A superconductor/magnetoresistance (SC/MR) mixed sensor often has very high-precision detection capability, but it is only sensitive to the out-of-plane magnetic field that is perpendicular to the superconducting flux-to-field transformation amplifier (SFTA). This inherent characteristic makes it impossible for a primary SC/MR mixed sensor to measure the in-plane magnetic field, which limits its application in many fields. This paper presents a new architecture of SC/MR mixed sensors with two magnetic flux guides (MFGs) to realize in-plane magnetic field measurement, which is attributed to the combined effects of MFGs and SFTA. The finite element method simulations are used to study the magnetic flux converting effect of MFGs and magnetic field amplification effect of SFTA, which theoretically proves the feasibility of in-plane magnetic field measurement and reveals the influences of the sizes and spacing of MFGs on magnetic field magnification. Experimental results show that the SC/MR mixed sensor with MFGs can simultaneously sense the in-plane and out-of-plane magnetic fields, and the performance of the mixed sensor with MFGs is comparable to the primary one. The magnification and resolution of the mixed sensors with MFGs to the in-plane magnetic fields are, respectively, improved by 2.91 times and 2.23 times compared to those without MFGs to the out-of-plane magnetic fields. The work described in this paper is of great significance for the development of three-component weak magnetic field detection.(C) 2022 Author(s).All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY)license (http://creativecommons.org/licenses/by/4.0/).<br />
机构:
Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering,Beihang University
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang UniversityFert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering,Beihang University
郝润润
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h-index:
机构:
张昆
李迎港
论文数: 0引用数: 0
h-index: 0
机构:
Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering,Beihang University
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang UniversityFert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering,Beihang University
机构:
IN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, PortugalIN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, Portugal
Leitao, D. C.
Trindade, I. G.
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h-index: 0
机构:
IN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, PortugalIN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, Portugal
Trindade, I. G.
Fermento, R.
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h-index: 0
机构:
IN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, PortugalIN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, Portugal
Fermento, R.
Araujo, J. P.
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h-index: 0
机构:
IN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, Portugal
DFFCUP, Oporto 4169007, PortugalIN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, Portugal
Araujo, J. P.
Cardoso, S.
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机构:
IN INESC MN, Lisbon, PortugalIN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, Portugal
Cardoso, S.
Freitas, P. P.
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机构:
IN INESC MN, Lisbon, PortugalIN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, Portugal
Freitas, P. P.
Sousa, J. B.
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h-index: 0
机构:
IN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, Portugal
DFFCUP, Oporto 4169007, PortugalIN IFIMUP, Rua Campo Alegre 678, P-4169007 Oporto, Portugal
Sousa, J. B.
ADVANCED MATERIALS FORUM IV,
2008,
587-588
: 313
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