Thin Film Challenges in 28nm Technology Node

被引：1

作者：

Zhang, Beichao ^{[1
]}

Zhang, Bin ^{[1
]}

Xiao, Haibo ^{[1
]}

Deng, Hao ^{[1
]}

Tong, Hao ^{[1
]}

Tan, Jingjing ^{[1
]}

Zhou, Ming ^{[1
]}

Li, Nicola ^{[1
]}

Guo, Shibi ^{[1
]}

Ren, Wanchun ^{[1
]}

Wang, Xiaona ^{[1
]}

Jing, Xuezheng ^{[1
]}

Xiang, Yanghui ^{[1
]}

Ping, Yanlei ^{[1
]}

Bao, Yu ^{[1
]}

Zhang, Ziying ^{[1
]}

Wang, Zengtao ^{[1
]}

Lu, Wei ^{[1
]}

Wu, Jinggang ^{[1
]}

机构：

[1] Semicond Mfg Int Shanghai Corp, Shanghai 201203, Peoples R China

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012) | 2012年 / 44卷 / 01期

关键词：

D O I：

10.1149/1.3694344

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

During 28nm technology node process development, a couple of dozens new thin films and advanced thin film processes have been introduced to meet needs of the CMOS circuit performance. These new films and processes are used for micro-patterning, gap-fill, high-k metal gate (HKMG) work function metals and electrodes, electrical and reliability performance, etc. This article shall report the latest progress in thin film developments at the leading Chinese semiconductor company, SMIC. Some key challenges in the areas mentioned above will be elaborated and various new thin film requirements will be discussed. Examples of some thin film process developments, especially in the micro-patterning, Metal Gate and STI and ILD gap-fill, and HKMG work function tuning, will be provided, and the preliminary results will be presented.

引用

页码：391 / 394

页数：4

共 50 条

[1] CPI Challenges to BEOL at 28nm Node and Beyond
Ryan, Vivian
Breuer, Dirk
Geisler, Holm
Kioussis, Dimitri
Lehr, Matthias U.
Paul, Jens
Machani, Kashi
Shah, Chirag
Kosgalwies, Sven
Lehmann, Lothar
Lee, Jaesik
Kuechenmeister, Frank
Ryan, E. Todd
Karimanal, Kamal
2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012,
[2] VIA AUTO RETARGET APPLICATION IN 28NM TECHNOLOGY NODE
Jiang, Bin-Jie
Yu, Shi-Rui
Wang, Dan
Zhang, Yue-Yu
Chen, Yan-Peng
Mao, Zhi-Biao
2015 China Semiconductor Technology International Conference, 2015,
[3] Design Challenges and Enablement for 28nm and 20nm Technology Nodes
Hou, Cliff Yung-Chin
2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2010, : 225 - 226
[4] Evaluation of Aluminum Film Properties and Microstructure for Replacement Metal Gate Application at 28nm Technology Node
Huang, R. P.
Hsien, Y. H.
Tsai, T. C.
Lin, Welch
Huang, H. F.
Hsu, C. M.
Tsai, M. C.
Lin, K. H.
Hsu, H. K.
Lin, J. F.
Yang, C. L.
Wu, J. Y.
2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM), 2011,
[5] SIGE LAYERS DEFECT OF 28NM NODE PMOSFETS IN ADVANCED CMOS TECHNOLOGY
Huang, Qiuming
Chen, Yongyue
Hong, Jiaqi
Yan, Qiang
Tan, Jun
Zhou, Haifeng
2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2019,
[6] FEASIBILITY ANALYSIS OF SKIP ILD CMP SCHEME ON 28NM TECHNOLOGY NODE
Chen, Fan
Liu, Zhen
Zhu, Shaojia
Yu, Mingfei
Li, Hu
Fang, Jingxun
CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC, 2024,
[7] Robust Porous SiOCH (k=2.5) for 28nm and beyond Technology Node
Lee, Janghee
Ahn, Sang Hoon
Jung, Insun
Han, Kyu-Hee
Kim, Gyeonghee
Sang-Don Nam
Jeon, Woo Sung
Kim, Byeong Hee
Choi, Gil Heyun
Choi, Siyoung
Kang, Ho-Kyu
Chung, Chilhee
2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM), 2011,
[8] CORNER SRAF STUDY FOR CT DOF ENHANCEMENT IN 28NM TECHNOLOGY NODE
Jiang, Bin-Jie
Chen, Yan-Peng
Yu, Shi-Rui
Mao, Zhi-Biao
2016 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2016,
[9] Power Optimization Approach of ORCA Processor for 32/28nm Technology Node
Babayan, Davit
TENTH INTERNATIONAL CONFERENCE ON COMPUTER SCIENCE AND INFORMATION TECHNOLOGIES REVISED SELECTED PAPERS CSIT-2015, 2015, : 11 - 14
[10] GDNMOS and GDBIMOS devices for ESD protection in 28nm thin film UTBB FD-SOI technology
De Conti, Louise
Cristoloveanu, Sorin
Vinet, Maud
Galy, Philippe
2018 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2018, : 73 - 76

← 1 2 3 4 5 →