Effect of Ag-Doping on Structural and Photoluminescence Properties of n-ZnO Nanorods/p-GaN Heterojunction

1D Ag-doped ZnO nanorods (NRs) have been synthesized on p-GaN films using a facile hydrothermal method, and investigated the effect of the Ag doping on the morphology and structure of the NRs and the optical performances of the n-ZnO NRs/p-GaN heterojunction. The results show that the section of ZnO nanorods is hexagon and ZnO nanorods were vertically grown on the p-GaN film. The XRD analysis shows that the (002) peak of the 1D ZnO NRs shifted toward a lower 20 with increasing the Ag content, indicating that the substitution of the Ag ions with the Zn ions leads to expansion of the ZnO lattice. With the increase of Ag doping concentration, the near band edge emission peak of ZnO nanorods shows a redshift, the intensity of near band edge emission peak weakened gradually and the intensity of yellow band emission peak has the opposite trend, and n-ZnO nanorods/p-GaN heterojunction reveals a better transmission efficiency.