40-Gb/s Direct Modulation of 1.3-μm Semi-Insulating Buried-Heterostructure AlGaInAs MQW DFB Lasers

被引：0
|
作者：
Otsubo, K. [1 ]
Matsuda, M. [1 ]
Takada, K. [1 ]
Okumura, S. [1 ]
Ekawa, M. [1 ]
Yamamoto, T. [1 ]
机构：
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源：
2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2008年
关键词：
D O I：
10.1109/ISLC.2008.4635988
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High relaxation oscillation frequency of 20.5 GHz and its slope of 3.2 GHz/mA(1/2) were obtained by S1-BH 1.3-mu m AlGaInAs MQW DFB lasers. Eye-opening up to 50 degrees C was demonstrated as a result of 40-Gb/s direct modulation.
引用
收藏
页码：19 / 20
页数：2
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