共 50 条
- [1] Distributed feedback InGaN/GaN laser diodesGALLIUM NITRIDE MATERIALS AND DEVICES XIII, 2018, 10532Slight, Thomas J.论文数: 0 引用数: 0 h-index: 0机构: Compound Semicond Technol Global Ltd, Hamilton G72 0BN, Scotland Compound Semicond Technol Global Ltd, Hamilton G72 0BN, Scotland论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:Grzanka, Szymon论文数: 0 引用数: 0 h-index: 0机构: Topgan, Warsaw, Poland Compound Semicond Technol Global Ltd, Hamilton G72 0BN, ScotlandStanczyk, Szymon论文数: 0 引用数: 0 h-index: 0机构: Topgan, Warsaw, Poland Compound Semicond Technol Global Ltd, Hamilton G72 0BN, ScotlandDocherty, Kevin E.论文数: 0 引用数: 0 h-index: 0机构: Kelvin Nanotechnol Ltd, Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland Compound Semicond Technol Global Ltd, Hamilton G72 0BN, ScotlandRafailov, Edik论文数: 0 引用数: 0 h-index: 0机构: Kelvin Nanotechnol Ltd, Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland Compound Semicond Technol Global Ltd, Hamilton G72 0BN, ScotlandPerlin, Piotr论文数: 0 引用数: 0 h-index: 0机构: Topgan, Warsaw, Poland Compound Semicond Technol Global Ltd, Hamilton G72 0BN, ScotlandNajda, Steve论文数: 0 引用数: 0 h-index: 0机构: Topgan, Warsaw, Poland Compound Semicond Technol Global Ltd, Hamilton G72 0BN, ScotlandLeszczynski, Mike论文数: 0 引用数: 0 h-index: 0机构: Topgan, Warsaw, Poland Compound Semicond Technol Global Ltd, Hamilton G72 0BN, ScotlandKelly, Anthony E.论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland Compound Semicond Technol Global Ltd, Hamilton G72 0BN, Scotland
- [2] Catastrophic Degradation of InGaN/GaN Blue Laser DiodesIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016, 16 (04) : 638 - 641Wen, Pengyan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaZhang, Shuming论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaLiu, Jianping论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaLi, Deyao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaZhang, Liqun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaZhou, Kun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaSu, Xujun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaTian, Aiqin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaZhang, Feng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaYang, Hui论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
- [3] Rapid degradation of InGaN/GaN green laser diodesSUPERLATTICES AND MICROSTRUCTURES, 2020, 142Xiu, Huixin论文数: 0 引用数: 0 h-index: 0机构: Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, 516 Jungong Rd, Shanghai 200093, Peoples R China Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaXu, Peng论文数: 0 引用数: 0 h-index: 0机构: Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, 516 Jungong Rd, Shanghai 200093, Peoples R China Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaWen, Pengyan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Suzhou 215123, Peoples R China Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaZhang, Yang论文数: 0 引用数: 0 h-index: 0机构: Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, 516 Jungong Rd, Shanghai 200093, Peoples R China Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, 516 Jungong Rd, Shanghai 200093, Peoples R ChinaYang, Junhe论文数: 0 引用数: 0 h-index: 0机构: Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, 516 Jungong Rd, Shanghai 200093, Peoples R China Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, 516 Jungong Rd, Shanghai 200093, Peoples R China
- [4] Laterally coupled InGaN/GaN DFB laser diodesPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 192 (02): : 301 - 307Schweizer, H论文数: 0 引用数: 0 h-index: 0机构: Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, GermanyGräbeldinger, H论文数: 0 引用数: 0 h-index: 0机构: Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, GermanyDumitru, V论文数: 0 引用数: 0 h-index: 0机构: Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, GermanyJetter, M论文数: 0 引用数: 0 h-index: 0机构: Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, GermanyBader, S论文数: 0 引用数: 0 h-index: 0机构: Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, GermanyBrüderl, G论文数: 0 引用数: 0 h-index: 0机构: Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, GermanyWeimar, A论文数: 0 引用数: 0 h-index: 0机构: Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, GermanyLell, A论文数: 0 引用数: 0 h-index: 0机构: Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, GermanyHärle, V论文数: 0 引用数: 0 h-index: 0机构: Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany
- [5] Advantages of InGaN-GaN-InGaN Delta Barriers for InGaN-Based Laser DiodesNANOMATERIALS, 2021, 11 (08)Cheng, Liwen论文数: 0 引用数: 0 h-index: 0机构: Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R ChinaLi, Zhenwei论文数: 0 引用数: 0 h-index: 0机构: Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R ChinaZhang, Jiayi论文数: 0 引用数: 0 h-index: 0机构: Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R ChinaLin, Xingyu论文数: 0 引用数: 0 h-index: 0机构: Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R ChinaYang, Da论文数: 0 引用数: 0 h-index: 0机构: Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R ChinaChen, Haitao论文数: 0 引用数: 0 h-index: 0机构: Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R ChinaWu, Shudong论文数: 0 引用数: 0 h-index: 0机构: Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R ChinaYao, Shun论文数: 0 引用数: 0 h-index: 0机构: Sino Semicond Technol Co Ltd, Taizhou 225300, Peoples R China Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China
- [6] Semipolar (101¯1¯) InGaN/GaN laser diodes on bulk GaN substratesJapanese Journal of Applied Physics, Part 2: Letters, 2007, 46 (17-19):Tyagi, Anurag论文数: 0 引用数: 0 h-index: 0机构: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United StatesZhong, Hong论文数: 0 引用数: 0 h-index: 0机构: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United StatesChung, Roy B.论文数: 0 引用数: 0 h-index: 0机构: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United StatesFeezell, Daniel F.论文数: 0 引用数: 0 h-index: 0机构: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United StatesSaito, Makoto论文数: 0 引用数: 0 h-index: 0机构: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United StatesFujito, Kenji论文数: 0 引用数: 0 h-index: 0机构: Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United StatesSpeck, James S.论文数: 0 引用数: 0 h-index: 0机构: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United StatesDenbaars, Steven P.论文数: 0 引用数: 0 h-index: 0机构: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United StatesNakamura, Shuji论文数: 0 引用数: 0 h-index: 0机构: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States
- [7] Identification of degradation mechanisms of blue InGaN/GaN laser diodesJOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (41)Wen, P. Y.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaZhang, S. M.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaLi, D. Y.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaLiu, J. P.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaZhang, L. Q.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaZhou, K.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaFeng, M. X.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaTian, A. Q.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaZhang, F.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaGao, X. D.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaZeng, C.论文数: 0 引用数: 0 h-index: 0机构: Sci & Technol Reliabil Phys & Applicat Technol El, Guangzhou, Guangdong, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaYang, H.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
- [8] Simulation and optimization of 420 nm InGaN/GaN laser diodesPHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 : 28 - 39Piprek, J论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USASink, RK论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USAHansen, MA论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USABowers, JE论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USADenBaars, SP论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
- [9] InGaN/GaN/AlGaN-based leds and laser diodesMRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4Nakamura, S论文数: 0 引用数: 0 h-index: 0机构: Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, Japan Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, JapanSenoh, M论文数: 0 引用数: 0 h-index: 0机构: Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, Japan Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, JapanNagahama, S论文数: 0 引用数: 0 h-index: 0机构: Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, Japan Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, JapanIwasa, N论文数: 0 引用数: 0 h-index: 0机构: Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, Japan Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, JapanMatushita, T论文数: 0 引用数: 0 h-index: 0机构: Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, Japan Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, JapanMukai, T论文数: 0 引用数: 0 h-index: 0机构: Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, Japan Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7740044, Japan
- [10] InGaN based green laser diodes on semipolar GaN substrateJAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (10)Adachi, Masahiro论文数: 0 引用数: 0 h-index: 0机构: Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan