InGaN/GaN Laser Diodes and their Applications

被引:0
|
作者
Watson, Scott [1 ]
Gwyn, Steffan [1 ]
Viola, Shaun [1 ]
Giuliano, Giovanni [1 ,5 ]
Slight, Thomas J. [2 ]
Stanczyk, Szymon [3 ]
Grzanka, Szymon [3 ]
Yadav, Amit [4 ]
Rowe, Duncan [5 ]
Laycock, Leslie [5 ]
Docherty, Kevin E. [6 ]
Rafailov, Edik [4 ]
Perlin, Piotr [3 ]
Najda, Steve [3 ]
Leszczynski, Mike [3 ]
Kelly, Anthony E. [1 ]
机构
[1] Univ Glasgow, Sch Engn, Glasgow, Lanark, Scotland
[2] Compound Semicond Technol Global Ltd, Hamilton, Scotland
[3] TopGaN Lasers, Sokolowska 29-37, Warsaw, Poland
[4] Aston Univ, Birmingham, W Midlands, England
[5] BAE Syst, Appl Intelligence Labs, Chelmsford, Essex, England
[6] Kelvin Nanotechnol Ltd, Glasgow, Lanark, Scotland
关键词
laser diode; gallium nitride; optical communications; orthogonal frequency division multiplexing; distributed feedback;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.
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页数:4
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