Evaluation of effectiveness of median of absolute deviations outlier rejection-based IDDQ testing for burn-in reduction

被引:22
|
作者
Sabade, SS [1 ]
Walker, DM [1 ]
机构
[1] Texas A&M Univ, Dept Comp Sci, College Stn, TX 77843 USA
关键词
D O I
10.1109/VTS.2002.1011115
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
CMOS chips having high leakage are observed to have high burn-in fallout rate. I-DDQ testing has been considered as an alternative to burn-in. However, increased subthreshold leakage current in deep sub-micron technologies limits the use of I-DDQ testing in its present form. In this work, a statistical outlier rejection technique known as the median of absolute deviations (MAD) is evaluated as a means to screen early failures using I-DDQ data. MAD is compared with delta I-DDQ and current signature methods. The results of the analysis of the SEMATECH data are presented.
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收藏
页码:81 / 86
页数:6
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