Interface performance of Bi2Te3-based micro thermoelectric devices optimized synergistically by surface modification engineering

被引:0
|
作者
Tang Hao [1 ]
Bai Hui [1 ,2 ]
Lu Jia-Nan [1 ,2 ]
Hua Si-Heng [1 ]
Yan Yong-Gao [1 ]
Yang Dong-Wang [1 ]
Wu Jin-Song [1 ,2 ]
Su Xian-Li [1 ]
Tang Xin-Feng [1 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Wuhan Univ Technol, Nanostruct Res Ctr, Wuhan 430070, Peoples R China
基金
中国国家自然科学基金;
关键词
Bi2Te3-based micro thermoelectric devices; Bi0.4Sb1.6Te3/Ni thermoelectric elements; surface modification engineering; interfacial contact resistivity; interfacial bonding strength; POWER-GENERATION; CONTACTS; PROGRESS;
D O I
10.7498/aps.71.20220549
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The miniaturization of thermoelectric devices raises a strong requirement for the excellent interfacial properties of thermoelectric elements. Thus, achieving a heterogeneous interface with low interfacial contact resistivity and high interfacial bonding strength is a prerequisite for the successful fabrication of high-performance and high-reliability Bi2Te3 -based micro thermoelectric devices. In this work, we adopt the acid pickling method to modify the surface structure of Bi0.4Sb1.6Te3 material to synergistically optimize the interfacial properties of Bi0.4Sb1.6Te3/Ni thermoelectric elements. The acid pickling process effectively modulates the work function of Bi0.4Sb1.6Te3 material, which dramatically reduces the contact barrier height of Ni/Bi0.4Sb1.6Te3 heterojunction from 0.22 to 0.02 eV. As a consequence, the corresponding interfacial contact resistivity of the element is greatly reduced from 14.2 to 0.22 mu Omega.cm(2). Moreover, the acid pickling process effectively adjusts the surface roughness of the matrix, forming a V-shaped pit of 2-5 mu m in depth on the substrate surface and leading to a pinning effect. This significantly enhances the physical bonding between the material surface and the Ni layer, which, together with the metallurgical bond formed by the interfacial diffusion reaction zone of about 50-nm-thick Ni/Bi0.4Sb1.6Te3, greatly enhances the interfacial bond strength from 7.14 to 22.34 MPa. The excellent interfacial properties are further validated by the micro-thermoelectric devices. The maximum cooling temperature difference of 4.7 mm x 4.9 mm micro thermoelectric device fabricated by this process achieves 56.5 K, with hot side temperature setting at 300 K, and the maximum output power reaches 882 mu W under the temperature gradient of 10 K. This work provides a new strategy for realizing the synergetic optimization of interfacial properties and opens up a new avenue for improving the performance of micro thermoelectric devices.
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页数:12
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