Design guidelines of tunnelling field-effect transistors for the suppression of work-function variation

被引：2
|
作者：
Choi, W. Y. [1 ]
机构：
[1] Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea
来源：
ELECTRONICS LETTERS | 2015年 / 51卷 / 22期
关键词：
D O I：
10.1049/el.2015.2625
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Design guidelines to suppress the work-function variation (WFV) effects of tunnelling field-effect transistors (TFETs) have been discussed in comparison with metal-oxide-semiconductor FETs for the first time. The effects of metal-gate materials and their grain size on the WFV have been investigated. The simulation results show that the selection of appropriate gate material and the reduction of metal grain size are the effective solutions to the WFV of TFETs.
引用
收藏
页码：1819 / 1820
页数：2
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