electrode materials;
semiconductors;
X-ray diffraction;
electronic transport;
magnetic measurements;
D O I:
10.1016/j.jallcom.2007.06.091
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The electrical conductivity and thermoelectric power of polycrystalline Ba0.98La0.02SnO3-delta, prepared under O-2-free atmosphere, have been measured between 4.2 and 300 K. The existence of onsite bipolaron is due to the tendency to Sn3+ ions to disproportionate into mixed valences Sn2+ and Sn4+ in equivalent sites. The data indicates electron degeneracy like conduction with polaron conductivity and a finite density of states at the Fermi level. The thermal evolution of the conductivity follows an Arrhenius type law with activation energy of 1 meV and electron mobility thermally activated. The conduction mechanism changes to a variable range hopping at low temperatures. From photo electrochemical measurements, the band gap E-g was found to be 3.26 eV and the transition is directly allowed; further indirect interband transition occurs at 2.82 eV. The valence band edge, located at 7.4 eV below vacuum, is made up from O:2p orbital typical of perovskite oxides. The respective values of the slopes (231 and 1104 mV dec(-1)) and the exchange current density J (0.339 mA cm(-2)) in the semi-logarithmic plot predict long-lived material. As expected, the title oxide exhibits a pH-dependent flat band potential V-fb and at pH 13.60 (KOH 1 M), the current-potential characteristic gave a V-fb-value of -0.03 V-SCE, close to that obtained from the capacitance measurement (+0.05 V-SCE). The C-2-potential plot displays a straight linear part with a positive slope confirming the n-type conductivity and a uniform doping density (N-d = 7.24 x 10(20) cm(-3)). The utilization of BaSnO3 as coating for PEC electrode is suggested. (C) 2007 Elsevier B.V. All rights reserved.
机构:
Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Liu, Ningtao
Zhang, Jinfu
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Zhang, Jinfu
Chen, Li
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Chen, Li
Wang, Liu
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Wang, Liu
Wu, Simiao
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Wu, Simiao
Zhang, Tan
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Zhang, Tan
Wang, Wei
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Wang, Wei
Wang, Zilong
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Wang, Zilong
Zhang, Wenrui
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Yongjiang Lab, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Zhang, Wenrui
Ye, Jichun
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Yongjiang Lab, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
机构:
Hokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan
Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, N14W9, Sapporo, Hokkaido 0600814, JapanHokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan
Cho, Hai Jun
Feng, Bin
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Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, 2-11-16 Yayoi, Tokyo 1138656, JapanHokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan
Feng, Bin
Onozato, Takaki
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Hokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, JapanHokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan
Onozato, Takaki
Wei, Mian
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Hokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, JapanHokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan
Wei, Mian
Sanchela, Anup, V
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Hokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, JapanHokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan
Sanchela, Anup, V
Ikuhara, Yuichi
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Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, 2-11-16 Yayoi, Tokyo 1138656, JapanHokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan
Ikuhara, Yuichi
Ohta, Hiromichi
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机构:
Hokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan
Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, N14W9, Sapporo, Hokkaido 0600814, JapanHokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan