Photoluminescence of two-dimensional electron system in modulation-doped GaAs quantum well

被引：0

作者：

Nakata, H ^{[1
]}

Fujii, K ^{[1
]}

Saitoh, M ^{[1
]}

Ohyama, T ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2001年 / 15卷 / 28-30期

关键词：

D O I：

10.1142/S0217979201008949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have carried out the photoluminescence measurements of two-dimensional electron system (2DES) in modulation-doped GaAs quantum well. It was found that the H band caused by radiative recombination between 2DES and holes shows a high energy tail below 4.2 K. We explain that the tail originates in the apparent breaking of the momentum conservation law, and that its reason is the electron scattering by neutral donors with the Bohr radius of similar to10 nm. The distance between the adjacent donors, 80nm, is obtained from the coupling of the Landau levels in the different 2DES's. Excitonic effect is suggested by nonlinear dependence of the peak energy of the H band on magnetic fields and the lineshape analysis of the H band.

引用

页码：3897 / 3900

页数：4

共 50 条

[1] Photoluminescence of two-dimensional electron system in modulation-doped GaAs quantum well
Nakata, H
Fujii, K
Saitoh, M
Ohyama, T
PROCEEDINGS OF THE 2000 INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER, 2001, : 329 - 332
[2] Magnetoluminescence in modulation-doped GaAs quantum well
Mitamura, T
Nakata, H
Fujii, K
Ohyama, T
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 204 - 206
[3] Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures
Kim, TW
Kim, JH
Lee, HS
Lee, JY
Kim, MD
APPLIED PHYSICS LETTERS, 2005, 86 (02) : 021916 - 1
[4] Photoluminescence of a two-dimensional electron gas in a modulation-doped GaAs/AlxGa1-xAs quantum well at filling factors ν<1 -: art. no. 115303
Ashkinadze, BM
Linder, E
Cohen, E
Dzyubenko, AB
Pfeiffer, LN
PHYSICAL REVIEW B, 2004, 69 (11)
[5] Temperature studies of photoluminescence in modulation-doped AlGaAs/GaAs quantum-well structures
Yaremenko, NG
Galiev, GB
Karachevtseva, MV
Mokerov, VG
Strakhov, VA
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2005, 50 (09) : 1097 - 1101
[6] ELECTRON-CONCENTRATION DEPENDENCE OF THE TWO-DIMENSIONAL ELECTRON MOBILITIES IN MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES
HIRAKAWA, K
SAKAKI, H
YOSHINO, J
SURFACE SCIENCE, 1986, 170 (1-2) : 440 - 444
[7] Observation of a two-dimensional electron gas in modulation-doped ZnTe/CdSe quantum wells
Smorchkova, IP
Samarth, N
APPLIED PHYSICS LETTERS, 1998, 72 (24) : 3193 - 3195
[8] Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells
Bergeron, E. Annelise
Sfigakis, F.
Shi, Y.
Nichols, George
Klipstein, P. C.
Elbaroudy, A.
Walker, Sean M.
Wasilewski, Z. R.
Baugh, J.
APPLIED PHYSICS LETTERS, 2023, 122 (01)
[9] HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS STRUCTURE FOR MODULATION-DOPED GAAS TRANSISTORS
CHRISTOU, A
VARMAZIS, K
HATZOPOULOS, Z
APPLIED PHYSICS LETTERS, 1987, 50 (14) : 935 - 936
[10] MODULATION-DOPED (ALGA)AS/GAAS QUANTUM WELL STRUCTURE WITH HIGH ELECTRON SHEET DENSITY
POWELL, AL
ROBERTS, JS
ROCKETT, PI
FOSTER, TJ
EAVES, L
ELECTRONICS LETTERS, 1989, 25 (17) : 1147 - 1148

← 1 2 3 4 5 →