Growth of nanocrystalline silicon films by VHF PECVD

被引：1
|
作者：
Gope, Jhuma [1 ,2 ]
Kumar, Sushil [1 ]
Singh, Sukhbir [1 ]
Rauthan, C. M. S. [1 ]
Srivastava, P. C. [2 ]
机构：
[1] CSIR, Natl Phys Lab, Phys Energy Harvesting Div, Dr KS Krishnan Rd, New Delhi 110012, India
[2] Banaras Hindu Univ, Dept Phys, Varanasi 221005, Uttar Pradesh, India
来源：
16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES | 2012年 / 8549卷
关键词：
nanocrystalline silicon; VHF PECVD; THIN-FILMS; DEPOSITION; PLASMA;
D O I：
10.1117/12.926986
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited using very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD) technique at 60 MHz. Films were grown at different power from 5 W to 40 W. The maximum deposition rate was found to be 6.1 A(0)/sec at 20 W power. These films were characterized by XRD which revealed that the size of the Si nanocrystals are in the range of 15.7 to 19.6 A(0). The optical band gap was found in the range between 1.64 to 1.74 eV.
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页数：7
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