Charge extraction analysis of charge carrier densities in a polythiophene/fullerene solar cell: Analysis of the origin of the device dark current

被引：195
|
作者：
Shuttle, C. G. [1 ]
Maurano, A. [1 ]
Hamilton, R. [1 ]
O'Regan, B. [1 ]
de Mello, J. C. [1 ]
Durrant, J. R. [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 18期
基金：
英国工程与自然科学研究理事会;
关键词：
carrier density; dark conductivity; fullerene devices; fullerenes; interface phenomena; polymers; solar cells;
D O I：
10.1063/1.3006316
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the use of a simple charge extraction measurement to determine the charge carrier densities n in annealed poly(3-hexylthiophene):methanofullerene solar cells under operating conditions. By applying charge extraction to the device under forward bias in the dark (J(dark)), we find J(dark)proportional to n(2.6). This dependence on charge density is the same as that we find for bimolecular recombination losses observed in such devices under irradiation at open circuit, suggesting that the dark current originates from bimolecular recombination at the polymer/fullerene interface.
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页数：3
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