InGaAs/InP Single-Photon Avalanche Diode with narrow photon timing response

被引:0
|
作者
Acerbi, Fabio [1 ]
Tosi, Alberto [1 ]
Shehata, Andrea Bahgat [1 ]
Anti, Michele [1 ]
Zappa, Franco [1 ]
机构
[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
关键词
detection efficiency; near infrared; single photon avalanche diode; photon counting; photon timing; TCSPC;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present the performances of new InGaAs/InP Single-Photon Avalanche Diodes (SPADs) for photon counting and timing operation up to about 1700 nm. They have been designed to achieve good detection efficiency, low afterpulsing and very good timing performances. When they are operated at 200 K, with 5 V of excess bias, they show a detection efficiency of more than 25% and a dark count rate of about 6 kcps. The timing performances (particularly the "sharpness" of the timing response) reaches the new state-of-the-art: full-width at half maximum of about 90 ps and a full-width at 1/1000 of maximum of less than 460 ps, thus allowing to acquire optical waveforms with very wide dynamic ranges in TCSPC measurements.
引用
收藏
页码:94 / 95
页数:2
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