Simulation of quantum transport in small semiconductor devices

被引：0
|
作者：
Fischetti, MV [1 ]
Laux, SE [1 ]
Kumar, A [1 ]
机构：
[1] Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA
来源：
SISPAD: 2005 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2005年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We describe a formulation of quantum electron transport in small devices based on the Master equation. We sketch its derivation from the Liouville-von Neumann equation, especially alluding to the subtle issues related to irreversibility. We compare this approach to alternative formulations of quantum transport and present results regarding ballistic and dissipative transport in double gate Si FETs.
引用
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页码：19 / 22
页数：4
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