Evaluation of the Absorption Spectrum in Quantum Dots for Efficient Solar Cells

被引：0
|
作者：
Giannoccaro, Giovanni [1 ]
Muciaccia, Tommaso [1 ]
Passaro, Vittorio M. N. [1 ]
机构：
[1] Politecn Bari, Photon Res Grp, Dipartimento Ingn Elettr & Informaz, I-70125 Bari, Italy
来源：
2014 FOTONICA AEIT ITALIAN CONFERENCE ON PHOTONICS TECHNOLOGIES | 2014年
关键词：
self-assembled quantum dots; absorption coefficient; solar cell; InGaN; InAs/GaAs QDs; crystal elastic deformation; piezoelectricity; pyroelectricity;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Today, possibility of photovoltaic efficiency increase with use of semiconductor quantum dots (QDs) in solid inorganic solar cells is a dynamic research field due to nanotechnology development and use of III-V and III-V nitride semiconductors (GaN or InGaN). Self-assembled quantum dots (SAQDs) growth in Stranski-Krastanov (SK) mode are very interesting nano-structures in order to achieve this goal. In this paper results derived by a FEM simulation analysis of absorption coefficient done on small zincblende InAs/GaAs and wurtzite InxGa1-xN/InyGa1-yN (In content x > y) SAQDs are shown and related to possible use in solar cells.
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页数：4
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